high-resolution electron microscopy造句

• No52 ： high - resolution electron microscopy and its application , f . h . li , j . electron microsc . technique , 7 ( 1987 ) 237 - 254
  高分辨电子显微学中的像解卷，李方华，电子显微学报， 5 ( 1986 ) 124 。
• No5 ： image processing based on the combination of high - resolution electron microscopy and electron diffraction ( invited paper ) , f . h . li , microscopy research and technique , 40 ( 1998 ) 86 - 100
  场发射高分辨电子显微镜在揭示原子分辨率晶体缺陷上的应用（特邀论文） ，李方华，科仪新知， 21 ( 1999 ) 8 - 15
• Sem , transmission electron microscopy ( tem ) , x - ray energy - dispersion analysis ( edax ) , xrd , electron diffraction ( ed ) and high - resolution electron microscopy ( hrem ) were used to investigate the morphology , atomic composition and crystal structure of the nanowires . the hexagonal cdse nanowires with single crystal structure have been obtained in dmso under 140 . ( 3 ) semiconductor te and cdte nanowires embedded in aao templates were fabricated for the first time by dc < wp = 7 > electrodeposition in ethylene glycol
  Sem 、 tem 、 edax 、 xrd 、 ed 、 hrem分析的结果表明，所得cdse纳米线为六方晶型，晶体的（ 001 ）晶面沿平行于基底的方向择优生长，且随沉积温度的降低，这种择优生长的趋势越来越强；纳米线晶体在生长时，由于受aao模板孔径的限制，形成c轴方向拉长的晶粒，其长径比达5 1以上；晶体的大小和完善程度随沉积温度的降低而增大， 185沉积得到多晶六方cdse纳米线，而140沉积时可得到六方cdse单晶纳米线。